First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors
نویسندگان
چکیده
منابع مشابه
Structural and Electronic Properties of Chalcopyrite Semiconductors
We have studied the structural and electronic properties of pure, deffect and doped chalcopyrite semiconductors using Density functional theory (DFT) based first principle technique within Tight binding Linear Muffin Tin orbital (TB-LMTO) method. Our calculated structural parameters such as lattice constant, anion displacement parameter(u) in case of pure chalcopyrite and anion displacement par...
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We describe the polymorphic order-disorder transition in the chalcopyrite-type semiconductor Cuo. slnosSe through a Monte Carlo simulation of a generalized Ising Hamiltonian whose interaction energies are determined from ab initio total-energy calculations. The calculated transition temperature (T, =1 l25+'20 K) compares well with experiment (T, =1083 K). Unlike the analogous ordering in isoval...
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In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulat...
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A simple relation between the optical electronegativity, energy gap, refractive index and electronic polarizability is given for ternary chalcopyrite semiconductors. Energy gap has been evaluated from the optical electronegativity whereas refractive index and electronic polarizability values have been evaluated from the energy gap by proposing a linear relation between them. The calculated valu...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4807650